Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFK80N50Q3 IXFX80N50Q3 D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 500 V 500 V 30 V 40 V TC =.
Low Intrinsic Gate Resistance
Low Package Inductance
Fast Intrinsic Rectifier
Low RDS(on) and QG
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
Temperature and Lighting Controls
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DS100299A(12/19)
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
gfs
VDS = 20V, ID = 0.5
• ID25, Note 1
Ciss Coss Crss
VGS = 0V, VDS = 25V, f = 1MHz
RGi
Gate Input Resistance
td(on) tr td(off) tf
Resistive Switc.
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