X2-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK100N65X2 IXFX100N65X2 VDSS = ID25 = RDS(on) 650V 100A 30m TO-264P (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuo.
International Standard Packages
Low QG
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
© 2016 IXYS CORPORATION, All Rights Reserved
DS100684B(03/16)
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs VDS = 10V, ID = 0.5
• ID25, Note 1
RGi Gate Input Resistance
Ciss Coss Crss
VGS = 0V, VDS = 25V, f = 1MHz
Co(er) Co(tr)
Effective Output Capacitance
Energy.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFK100N10 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
2 | IXFK100N25 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
3 | IXFK102N30P |
IXYS Corporation |
Polar MOSFETs | |
4 | IXFK105N07 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
5 | IXFK110N06 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
6 | IXFK110N07 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
7 | IXFK120N20 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
8 | IXFK120N20P |
IXYS Corporation |
PolarHT HiPerFET Power MOSFET | |
9 | IXFK120N25 |
IXYS |
HiPerFET Power MOSFETs | |
10 | IXFK120N25P |
IXYS |
Power MOSFET | |
11 | IXFK120N30T |
IXYS |
GigaMOS Power MOSFET | |
12 | IXFK120N30T |
IXYS |
GigaMOS Power MOSFET |