IXFK80N50P - IXYS

IXFK80N50P PolarHV HiPerFET Power MOSFET

Advance Technical Information PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK 80N50P IXFX 80N50P VDSS ID25 trr RDS(on) = 500 V = 80 A < 65 mΩ < 200 ns www.DataSheet4U.com TO-264 AA (IXFK) Symbol VDSS VDGR VGSM VGSM ID25 IL IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC Md Weight 1.6 mm (0.062 in.) from .

Features

z z 1.13/10 Nm/lb.in. 10 6 g g z Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 500 μA VDS = VGS, ID = 8 mA VGS = ± 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 TJ = 125°C Characteristic Values Min. Typ. Max. 500 3.0 5.0 ± 200 25 1 65 V V nA μA mA mΩ International standard package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z Easy to mount Space savings High power density © 2005 IXYS All rights reserved DS99437(09/05) IXFK 80N50P IXFX 80N5.