IXFK100N10 - IXYS Corporation

IXFK100N10 HiPerFET Power MOSFETs

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS IXFK100N10 IXFN150N10 ID25 RDS(on) 12 mW 12 mW 100 V 100 A 100 V 150 A trr £ 200 ns TO-264 AA (IXFK) Symbol VDSS VDGR VGS VGSM ID25 ID120 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Cont.

Features

International standard packages JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification miniBLOC with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier q q q q q q q q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 100 2 4 ±200 TJ = 25°C TJ = 125°C 400 2 12 V V nA mA mA mW VDSS VGH(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1 mA VDS = VGS, ID = 8 mA VGS = ±20 VDC, VDS = 0 VDS = 0.8
• VDSS VGS = 0 .