www.DataSheet.co.kr Ordering number : ENA1529 CPH6350 SANYO Semiconductors DATA SHEET CPH6350 Features • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications 4V drive. Low ON-resistance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pul.
•
•
P-Channel Silicon MOSFET
General-Purpose Switching Device Applications
4V drive. Low ON-resistance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings --30 ±20 -6 --24 1.6 150 --55 to +150 Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Ga.
Ordering number : ENA1529B CPH6350 P-Channel Power MOSFET –30V, –6A, 43mΩ, Single CPH6 http://onsemi.com Features • 4.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CPH6351 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
2 | CPH6352 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
3 | CPH6354 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET | |
4 | CPH6354 |
ON Semiconductor |
Power MOSFET | |
5 | CPH6355 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET | |
6 | CPH6355 |
ON Semiconductor |
Power MOSFET | |
7 | CPH6301 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
8 | CPH6302 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
9 | CPH6306 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
10 | CPH6311 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
11 | CPH6312 |
Sanyo Semicon Device |
High-Speed Switching Applications | |
12 | CPH6313 |
Sanyo Semicon Device |
High-Speed Switching Applications |