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CPH6350 - Sanyo Semicon Device

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CPH6350 P-Channel Silicon MOSFET

www.DataSheet.co.kr Ordering number : ENA1529 CPH6350 SANYO Semiconductors DATA SHEET CPH6350 Features • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications 4V drive. Low ON-resistance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pul.

Features



• P-Channel Silicon MOSFET General-Purpose Switching Device Applications 4V drive. Low ON-resistance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings --30 ±20 -6 --24 1.6 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Ga.

The same part from a different manufacturer

Datasheet CPH6350 - ON Semiconductor CPH6350

Ordering number : ENA1529B CPH6350 P-Channel Power MOSFET –30V, –6A, 43mΩ, Single CPH6 http://onsemi.com Features • 4.

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