CPH6350 |
Part Number | CPH6350 |
Manufacturer | Sanyo Semicon Device |
Description | www.DataSheet.co.kr Ordering number : ENA1529 CPH6350 SANYO Semiconductors DATA SHEET CPH6350 Features • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications 4V drive. Low ... |
Features |
• • P-Channel Silicon MOSFET General-Purpose Switching Device Applications 4V drive. Low ON-resistance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings --30 ±20 -6 --24 1.6 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Ga... |
Document |
CPH6350 Data Sheet
PDF 338.95KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CPH6350 |
ON Semiconductor |
P-Channel Power MOSFET | |
2 | CPH6351 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
3 | CPH6352 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
4 | CPH6354 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET | |
5 | CPH6354 |
ON Semiconductor |
Power MOSFET |