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CPH6355 - Sanyo Semicon Device

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CPH6355 P-Channel Silicon MOSFET

www.DataSheet.co.kr Ordering number : EN8933 CPH6355 SANYO Semiconductors DATA SHEET CPH6355 Features • • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications ON-resistance RDS(on)1=130mΩ(typ.) 4V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Volta.

Features




• P-Channel Silicon MOSFET General-Purpose Switching Device Applications ON-resistance RDS(on)1=130mΩ(typ.) 4V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1500mm2×0.8mm) Conditions Ratings --30 ±20 -3 --12 1.6 150 --55 to +150 Unit V V A A W °C °C Package Dimensions unit : mm (typ) 7018A-003 2..

The same part from a different manufacturer

Datasheet CPH6355 - ON Semiconductor CPH6355

CPH6355 Power MOSFET –30V, 169mΩ, –3A, Single P-Channel www.onsemi.com Features • Low ON-Resistance • 4V Drive • Pb-Fr.

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