Ordering number : ENN6936 CPH6351 P-Channel Silicon MOSFET CPH6351 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions unit : mm 2151A [CPH6351] 0.2 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 2.9 0.15 6 5 4 0.6 0.05 1.6 2.8 1 2 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-S.
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Package Dimensions
unit : mm 2151A
[CPH6351]
0.2
Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.
2.9
0.15
6
5
4
0.6
0.05
1.6 2.8
1
2
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions
0.7 0.9
0.2
3 0.95
1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6
0.4
0.6
Ratings --20 ± 10 --3 --12 1.6 150 --55 to +15.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CPH6350 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET | |
2 | CPH6350 |
ON Semiconductor |
P-Channel Power MOSFET | |
3 | CPH6352 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
4 | CPH6354 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET | |
5 | CPH6354 |
ON Semiconductor |
Power MOSFET | |
6 | CPH6355 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET | |
7 | CPH6355 |
ON Semiconductor |
Power MOSFET | |
8 | CPH6301 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
9 | CPH6302 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
10 | CPH6306 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
11 | CPH6311 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
12 | CPH6312 |
Sanyo Semicon Device |
High-Speed Switching Applications |