APT200GT60JRDQ4 - Microsemi Corporation

APT200GT60JRDQ4 Thunderbolt IGBT

www.DataSheet4U.com APT200GT60JRDQ4 600V, 200A, VCE(ON) = 2.0V Typical Thunderbolt IGBT® The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed. E G C E Features • Low Forward Voltage Drop • Low Tail Current • Integrated Gat.

Features

• Low Forward Voltage Drop
• Low Tail Current
• Integrated Gate Resistor Low EMI, High Reliability
• RoHS Compliant
• RBSOA and SCSOA Rated
• High Frequency Switching to 50KHz
• Ultra Low Leakage Current S ISOTOP ® OT 22 7 "UL Recognized" file # E145592 Maximum Ratings Symbol Parameter VCES VGE IC1 IC2 ICM SSOA PD TJ, TSTG Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current 1 Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Ra.