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APT200GT60JRDQ4 |
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| Part Number | APT200GT60JRDQ4 |
| Manufacturer | Microsemi (https://www.microsemi.com/) Corporation |
| Description | www.DataSheet4U.com APT200GT60JRDQ4 600V, 200A, VCE(ON) = 2.0V Typical Thunderbolt IGBT® The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, th... |
| Features |
• Low Forward Voltage Drop • Low Tail Current • Integrated Gate Resistor Low EMI, High Reliability • RoHS Compliant • RBSOA and SCSOA Rated • High Frequency Switching to 50KHz • Ultra Low Leakage Current S ISOTOP ® OT 22 7 "UL Recognized" file # E145592 Maximum Ratings Symbol Parameter VCES VGE IC1 IC2 ICM SSOA PD TJ, TSTG Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current 1 Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Ra... |
| Document |
 APT200GT60JRDQ4 Data Sheet
PDF 260.51KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | APT200GT60JRDL |
Microsemi Corporation |
Resonant Mode Combi IGBT |
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| 2 | APT200GT60JR |
Microsemi Corporation |
Thunderbolt IGBT |
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| 3 | APT200GN60B2G |
Microsemi Corporation |
Field Stop IGBT |
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| 4 | APT200GN60J |
Advanced Power Technology |
Intergrated Gate Resistor: Low EMI High Reliability |
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| 5 | APT200GN60JDQ4 |
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