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TYPICAL PERFORMANCE CURVES ® APT200GN60JDQ4 600V www.DataSheet4U.com APT200GN60JDQ4 Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly pos.
tage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 All Ratings: TC = 25°C unless otherwise specified. APT200GN60JDQ4 UNIT Volts 600 ±20 283 158 600 600A @600V 682 -55 to 175 Amps Switching Safe Operating Area @ TJ = 175°C Total Power Dissipation Operating and Storage Junction Temperature Range Watts °C STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA) Gate Threshold Voltage (VCE = VGE, I C = 3.2mA, Tj = 25°C.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | APT200GN60J |
Advanced Power Technology |
Intergrated Gate Resistor: Low EMI High Reliability |
|
| 2 | APT200GN60B2G |
Microsemi Corporation |
Field Stop IGBT |
|
| 3 | APT200GT60JR |
Microsemi Corporation |
Thunderbolt IGBT |
|
| 4 | APT200GT60JRDL |
Microsemi Corporation |
Resonant Mode Combi IGBT |
|
| 5 | APT200GT60JRDQ4 |
Microsemi Corporation |
Thunderbolt IGBT |
|
| 6 | APT2012F3C |
Kingbright |
Infrared Emitting Diode |
|
| 7 | APT2012MGC |
Kingbright Corporation |
Straight 1-Row BergStik II Headers |
|
| 8 | APT2012P3BT |
Kingbright |
PHOTOTRANSISTOR |
|
| 9 | APT2012QGW |
Kingbright Electronic |
Straight 1-Row BergStik II Headers |
|
| 10 | APT2012QYW |
Kingbright Electronic |
Straight 1-Row BergStik II Headers |
|
| 11 | APT2012SGC |
Kingbright Corporation |
Straight 1-Row BergStik II Headers |
|
| 12 | APT2012SRCPRV |
Kingbright |
SMD LED |
|