F3 Made with Gallium Arsenide Infrared Emitting diodes FEATURES 2.0 mm x 1.25 mm SMD LED, 0.75mm thickness Mechanically and spectrally matched to the phototransistor Package: 2000 pcs / reel Moisture sensitivity level: 3 RoHS compliant APPLICATIONS Backlight Status indicator Home and smart appliances Wearable and portable devices Healthcare applications PA.
2.0 mm x 1.25 mm SMD LED, 0.75mm thickness Mechanically and spectrally matched to the phototransistor Package: 2000 pcs / reel Moisture sensitivity level: 3 RoHS compliant APPLICATIONS Backlight Status indicator Home and smart appliances Wearable and portable devices Healthcare applications PACKAGE DIMENSIONS RECOMMENDED SOLDERING PATTERN (units : mm; tolerance : ± 0.1) Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.1(0.004") unless otherwise noted. 3. The specifications, characteristics and technical data described in the datasheet are subject to change without pr.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | APT2012MGC |
Kingbright Corporation |
Straight 1-Row BergStik II Headers | |
2 | APT2012P3BT |
Kingbright |
PHOTOTRANSISTOR | |
3 | APT2012QGW |
Kingbright Electronic |
Straight 1-Row BergStik II Headers | |
4 | APT2012QYW |
Kingbright Electronic |
Straight 1-Row BergStik II Headers | |
5 | APT2012SGC |
Kingbright Corporation |
Straight 1-Row BergStik II Headers | |
6 | APT2012SRCPRV |
Kingbright |
SMD LED | |
7 | APT200GN60B2G |
Microsemi Corporation |
Field Stop IGBT | |
8 | APT200GN60J |
Advanced Power Technology |
Intergrated Gate Resistor: Low EMI High Reliability | |
9 | APT200GN60JDQ4 |
Advanced Power Technology |
IGBT | |
10 | APT200GT60JR |
Microsemi Corporation |
Thunderbolt IGBT | |
11 | APT200GT60JRDL |
Microsemi Corporation |
Resonant Mode Combi IGBT | |
12 | APT200GT60JRDQ4 |
Microsemi Corporation |
Thunderbolt IGBT |