The Super Bright Red source color devices are made with Gallium Aluminum Arsenide Red Light Emitting Diode Electrostatic discharge and power surge could damage the LEDs It is recommended to use a wrist band or anti-electrostatic glove when handling the LEDs All devices, equipments and machineries must be electrically grounded FEATURES 2.0 mm x 1.25 mm SMD L.
2.0 mm x 1.25 mm SMD LED, 0.75 mm thickness Low power consumption Wide viewing angle Ideal for backlight and indicator Package: 2000 pcs / reel Moisture sensitivity level: 3 Halogen-free RoHS compliant APPLICATIONS Backlight Status indicator Home and smart appliances Wearable and portable devices Healthcare applications ATTENTION Observe precautions for handling electrostatic discharge sensitive devices PACKAGE DIMENSIONS RECOMMENDED SOLDERING PATTERN (units : mm; tolerance : ± 0.1) Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.1(0.004") unless otherwise noted. 3. T.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | APT2012SGC |
Kingbright Corporation |
Straight 1-Row BergStik II Headers | |
2 | APT2012F3C |
Kingbright |
Infrared Emitting Diode | |
3 | APT2012MGC |
Kingbright Corporation |
Straight 1-Row BergStik II Headers | |
4 | APT2012P3BT |
Kingbright |
PHOTOTRANSISTOR | |
5 | APT2012QGW |
Kingbright Electronic |
Straight 1-Row BergStik II Headers | |
6 | APT2012QYW |
Kingbright Electronic |
Straight 1-Row BergStik II Headers | |
7 | APT200GN60B2G |
Microsemi Corporation |
Field Stop IGBT | |
8 | APT200GN60J |
Advanced Power Technology |
Intergrated Gate Resistor: Low EMI High Reliability | |
9 | APT200GN60JDQ4 |
Advanced Power Technology |
IGBT | |
10 | APT200GT60JR |
Microsemi Corporation |
Thunderbolt IGBT | |
11 | APT200GT60JRDL |
Microsemi Corporation |
Resonant Mode Combi IGBT | |
12 | APT200GT60JRDQ4 |
Microsemi Corporation |
Thunderbolt IGBT |