The Yellow source color devices are made with Gallium Phosphide Yellow Light Emitting Diode. SMT LED,0.75mm THICKNESS. POWER CONSUMPTION. VIEWING ANGLE. COLORS AND LENS TYPES AVAILABLE. TO THE CLASSIFICATION OF LASER !IDEAL FOR BACKLIGHT AND INDICATOR. ! VARIOUS ! ACCORDING PRODUCTS OF IEC 60825-1, THE INDICATOR UNDER CONSIDERATION IS CLASSIFIED AS CLAS.
!LOW ! 2.0mmx1.2mm w w w ! WIDE .D a t a e h S 4 t e U .c om 2.0x1.2mm SMD CHIP LED LAMP APT2012QYW YELLOW Description The Yellow source color devices are made with Gallium Phosphide Yellow Light Emitting Diode. SMT LED,0.75mm THICKNESS. POWER CONSUMPTION. VIEWING ANGLE. COLORS AND LENS TYPES AVAILABLE. TO THE CLASSIFICATION OF LASER !IDEAL FOR BACKLIGHT AND INDICATOR. ! VARIOUS ! ACCORDING PRODUCTS OF IEC 60825-1, THE INDICATOR UNDER CONSIDERATION IS CLASSIFIED AS CLASS 1. !PACKAGE : 2000PCS / REEL. Package Dimensions w w w .D t a S a e h t e U 4 .c m o Notes:.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | APT2012QGW |
Kingbright Electronic |
Straight 1-Row BergStik II Headers | |
2 | APT2012F3C |
Kingbright |
Infrared Emitting Diode | |
3 | APT2012MGC |
Kingbright Corporation |
Straight 1-Row BergStik II Headers | |
4 | APT2012P3BT |
Kingbright |
PHOTOTRANSISTOR | |
5 | APT2012SGC |
Kingbright Corporation |
Straight 1-Row BergStik II Headers | |
6 | APT2012SRCPRV |
Kingbright |
SMD LED | |
7 | APT200GN60B2G |
Microsemi Corporation |
Field Stop IGBT | |
8 | APT200GN60J |
Advanced Power Technology |
Intergrated Gate Resistor: Low EMI High Reliability | |
9 | APT200GN60JDQ4 |
Advanced Power Technology |
IGBT | |
10 | APT200GT60JR |
Microsemi Corporation |
Thunderbolt IGBT | |
11 | APT200GT60JRDL |
Microsemi Corporation |
Resonant Mode Combi IGBT | |
12 | APT200GT60JRDQ4 |
Microsemi Corporation |
Thunderbolt IGBT |