The Mega Green source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.1(0.004") unless otherwise noted. 3. Specifications are subject to change without notice. SPEC NO: DSAA7633 APPROVED: J. Lu REV NO: V.5 CHECKED: Allen Liu DATE: M.
2.0mmx1.25mm SMT LED,0.75mm THICKNESS. LOW POWER CONSUMPTION. WIDE VIEWING ANGLE. IDEAL FOR BACKLIGHT AND INDICATOR. VARIOUS COLORS AND LENS TYPES AVAILABLE. PACKAGE : 2000PCS / REEL. RoHS COMPLIANT. Description The Mega Green source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.1(0.004") unless otherwise noted. 3. Specifications are subject to change without notice. SPEC NO: DSAA7633 APPROVED: J. Lu REV NO: V.5 CHECKED: Allen Liu DATE: MAR/12/2005 DRAWN: Y.CHENG .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | APT2012F3C |
Kingbright |
Infrared Emitting Diode | |
2 | APT2012P3BT |
Kingbright |
PHOTOTRANSISTOR | |
3 | APT2012QGW |
Kingbright Electronic |
Straight 1-Row BergStik II Headers | |
4 | APT2012QYW |
Kingbright Electronic |
Straight 1-Row BergStik II Headers | |
5 | APT2012SGC |
Kingbright Corporation |
Straight 1-Row BergStik II Headers | |
6 | APT2012SRCPRV |
Kingbright |
SMD LED | |
7 | APT200GN60B2G |
Microsemi Corporation |
Field Stop IGBT | |
8 | APT200GN60J |
Advanced Power Technology |
Intergrated Gate Resistor: Low EMI High Reliability | |
9 | APT200GN60JDQ4 |
Advanced Power Technology |
IGBT | |
10 | APT200GT60JR |
Microsemi Corporation |
Thunderbolt IGBT | |
11 | APT200GT60JRDL |
Microsemi Corporation |
Resonant Mode Combi IGBT | |
12 | APT200GT60JRDQ4 |
Microsemi Corporation |
Thunderbolt IGBT |