Made with NPN silicon phototransistor chips. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.1(0.004") unless otherwise noted. 3. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. 4. The device has a single mounting surface. The device mu.
z 2.0mmx1.25mm SMD LED,0.75mm thickness. z Mechanically and spectrally matched to infrared emitting LED lamp. z Package: 2000pcs / reel . z Blue transparent lens. z Moisture sensitivity level : level 3. z RoHS compliant. Description Made with NPN silicon phototransistor chips. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.1(0.004") unless otherwise noted. 3. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. 4. The device has a single mounting surface. The device must be .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | APT2012F3C |
Kingbright |
Infrared Emitting Diode | |
2 | APT2012MGC |
Kingbright Corporation |
Straight 1-Row BergStik II Headers | |
3 | APT2012QGW |
Kingbright Electronic |
Straight 1-Row BergStik II Headers | |
4 | APT2012QYW |
Kingbright Electronic |
Straight 1-Row BergStik II Headers | |
5 | APT2012SGC |
Kingbright Corporation |
Straight 1-Row BergStik II Headers | |
6 | APT2012SRCPRV |
Kingbright |
SMD LED | |
7 | APT200GN60B2G |
Microsemi Corporation |
Field Stop IGBT | |
8 | APT200GN60J |
Advanced Power Technology |
Intergrated Gate Resistor: Low EMI High Reliability | |
9 | APT200GN60JDQ4 |
Advanced Power Technology |
IGBT | |
10 | APT200GT60JR |
Microsemi Corporation |
Thunderbolt IGBT | |
11 | APT200GT60JRDL |
Microsemi Corporation |
Resonant Mode Combi IGBT | |
12 | APT200GT60JRDQ4 |
Microsemi Corporation |
Thunderbolt IGBT |