APT200GN60B2G - Microsemi Corporation

APT200GN60B2G Field Stop IGBT

www.DataSheet4U.com APT200GN60B2G 600V, VCE(ON) = 1.45V Typical Field Stop IGBT Utilizing the latest Field Stop and Trench Gate technologies, these IGBT’s have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positiv.

Features

llector Current Total Power Dissipation Operating and Storage Junction Temperature Range 1 All Ratings: TC = 25°C unless otherwise specified. Ratings 600 ±20 283 158 600 600A @ 600V 682 -55 to 175 300 Watts °C Amps Unit Volts Switching Safe Operating Area @ TJ = 175°C Max. Lead Temp. for Soldering: 0.063” from Case for 10 Sec. Static Electrical Characteristics Symbol Characteristic / Test Conditions V(BR)CES VGE(TH) VCE(ON) ICES IGES RG(int) Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 4mA) Gate Threshold Voltage (VCE = VGE, IC = 3.2mA, Tj = 25°C) Collector Emitter On Voltage (VGE =.