APT200GT60JRDL - Microsemi Corporation

APT200GT60JRDL Resonant Mode Combi IGBT

TYPICAL PERFORMANCE CURVES APT200GT60JRDL 600V, 200A, VCE(ON) = 2.0V Typical www.DataSheet4U.com APT200GT60JRDL Resonant Mode Combi IGBT® The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed..

Features

• Low Forward Voltage Drop
• Low Tail Current
• Integrated Gate Resistor Low EMI, High Reliability
• Low forward Diode Voltage (VF)
• RoHS Compliant
• Ultra soft recovery diode
• RBSOA and SCSOA Rated
• High Frequency Switching to 50KHz
• Ultra Low Leakage Current Typical Applications
• ZVS Phase Shifted Bridge
• Resonant Mode Switching
• Phase Shifted Bridge
• Welding
• Induction heating
• High Frequency SMPS ISOTOP ® C G E MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Conti.