Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
APT200GT60JRDL |
Click to view a larger image
| Part Number | APT200GT60JRDL |
| Manufacturer | Microsemi (https://www.microsemi.com/) Corporation |
| Description | TYPICAL PERFORMANCE CURVES APT200GT60JRDL 600V, 200A, VCE(ON) = 2.0V Typical www.DataSheet4U.com APT200GT60JRDL Resonant Mode Combi IGBT® The Thunderbolt IGBT® used in this Resonant Mode Combi is a... |
| Features |
• Low Forward Voltage Drop • Low Tail Current • Integrated Gate Resistor Low EMI, High Reliability • Low forward Diode Voltage (VF) • RoHS Compliant • Ultra soft recovery diode • RBSOA and SCSOA Rated • High Frequency Switching to 50KHz • Ultra Low Leakage Current Typical Applications • ZVS Phase Shifted Bridge • Resonant Mode Switching • Phase Shifted Bridge • Welding • Induction heating • High Frequency SMPS ISOTOP ® C G E MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Conti... |
| Document |
 APT200GT60JRDL Data Sheet
PDF 292.62KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | APT200GT60JRDQ4 |
Microsemi Corporation |
Thunderbolt IGBT |
|
| 2 | APT200GT60JR |
Microsemi Corporation |
Thunderbolt IGBT |
|
| 3 | APT200GN60B2G |
Microsemi Corporation |
Field Stop IGBT |
|
| 4 | APT200GN60J |
Advanced Power Technology |
Intergrated Gate Resistor: Low EMI High Reliability |
|
| 5 | APT200GN60JDQ4 |
Advanced Power Technology |
IGBT |
|