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APT200GN60JDQ4 |
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| Part Number | APT200GN60JDQ4 |
| Manufacturer | Advanced Power Technology |
| Description | TYPICAL PERFORMANCE CURVES ® APT200GN60JDQ4 600V www.DataSheet4U.com APT200GN60JDQ4 Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal fo... |
| Features |
tage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current
1
All Ratings: TC = 25°C unless otherwise specified.
APT200GN60JDQ4 UNIT Volts
600 ±20 283 158 600 600A @600V 682 -55 to 175
Amps
Switching Safe Operating Area @ TJ = 175°C Total Power Dissipation Operating and Storage Junction Temperature Range
Watts °C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA) Gate Threshold Voltage (VCE = VGE, I C = 3.2mA, Tj = 25°C... |
| Document |
 APT200GN60JDQ4 Data Sheet
PDF 552.07KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | APT200GN60J |
Advanced Power Technology |
Intergrated Gate Resistor: Low EMI High Reliability |
|
| 2 | APT200GN60B2G |
Microsemi Corporation |
Field Stop IGBT |
|
| 3 | APT200GT60JR |
Microsemi Corporation |
Thunderbolt IGBT |
|
| 4 | APT200GT60JRDL |
Microsemi Corporation |
Resonant Mode Combi IGBT |
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| 5 | APT200GT60JRDQ4 |
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Thunderbolt IGBT |
|