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APT200GN60B2G |
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| Part Number | APT200GN60B2G |
| Manufacturer | Microsemi (https://www.microsemi.com/) Corporation |
| Description | www.DataSheet4U.com APT200GN60B2G 600V, VCE(ON) = 1.45V Typical Field Stop IGBT Utilizing the latest Field Stop and Trench Gate technologies, these IGBT’s have ultra low VCE(ON) and are ideal for lo... |
| Features |
llector Current Total Power Dissipation Operating and Storage Junction Temperature Range
1
All Ratings: TC = 25°C unless otherwise specified. Ratings
600 ±20 283 158 600 600A @ 600V 682 -55 to 175 300 Watts °C Amps
Unit
Volts
Switching Safe Operating Area @ TJ = 175°C
Max. Lead Temp. for Soldering: 0.063” from Case for 10 Sec.
Static Electrical Characteristics Symbol Characteristic / Test Conditions
V(BR)CES VGE(TH) VCE(ON) ICES IGES RG(int) Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 4mA) Gate Threshold Voltage (VCE = VGE, IC = 3.2mA, Tj = 25°C) Collector Emitter On Voltage (VGE =... |
| Document |
 APT200GN60B2G Data Sheet
PDF 186.98KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | APT200GN60J |
Advanced Power Technology |
Intergrated Gate Resistor: Low EMI High Reliability |
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| 2 | APT200GN60JDQ4 |
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| 3 | APT200GT60JR |
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| 4 | APT200GT60JRDL |
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| 5 | APT200GT60JRDQ4 |
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