AOSP66406 - Alpha & Omega Semiconductors

AOSP66406 40V N-Channel MOSFET

• Trench Power AlphaSGTTM technology • Low RDS(ON) • Logic Level Driving • Excellent Gate Charge x RDS(ON) Product (FOM) • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 40V 17A < 6.6mΩ < 10mΩ Applications • High Frequency Switching and Synchronous Rectification • DC-Motor Driver 100% UIS Te.

Features

Units V V A A mJ W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 31 59 Maximum Junction-to-Lead Steady-State RθJL 16 Max 40 75 24 Units °C/W °C/W °C/W Rev.1.0: October 2017 www.aosmd.com Page 1 of 5 AOSP66406 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 40 IDSS Zero Gate Voltage Drain Current VDS=40V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, V.