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AOSP21357 |
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| Part Number | AOSP21357 |
| Manufacturer | Alpha & Omega Semiconductors |
| Description | • Latest advanced trench technology • Low RDS(ON) • High Current capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) -30V -... |
| Features |
°C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ 10s Steady-State Steady-State
Symbol RqJA RqJL
Typ 31 59 16
Max 40 75 24
Units °C/W °C/W °C/W
Rev.3.0: February 2020
www.aosmd.com
Page 1 of 5
AOSP21357
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=-250mA, VGS=0V
IDSS Zero Gate Voltage Drain Current • Latest VDS=-30V, VGS=0V advanced Gate-Body leakage current VDS=0V, VGS=±25V VGS(th) Gate Threshold... |
| Document |
 AOSP21357 Data Sheet
PDF 504.76KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AOSP21307 |
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P-Channel MOSFET |
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| 2 | AOSP21311C |
Alpha & Omega Semiconductors |
30V P-Channel MOSFET |
|
| 3 | AOSP21313C |
Alpha & Omega Semiconductors |
30V P-Channel MOSFET |
|
| 4 | AOSP21321 |
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30V P-Channel MOSFET |
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| 5 | AOSP32314 |
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30V N-Channel MOSFET |
|