AOSP66925 - Alpha & Omega Semiconductors

AOSP66925 100V N-Channel MOSFET

• Trench Power AlphaSGTTM technology 100V • Low RDS(ON) • Logic Level Driving • Excellent QG x RDS(ON) Product (FOM) • RoHS 2.0 and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100V 11A < 12.5mΩ < 16.8mΩ Applications • High Frequency Switching and Synohronous Rectification. 100% UIS Tested 100% Rg .

Features

nits V V A A mJ W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 31 59 Maximum Junction-to-Lead Steady-State RqJL 16 Max 40 75 24 Units °C/W °C/W °C/W Rev.1.0: November 2021 www.aosmd.com Page 1 of 5 AOSP66925 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250μA, VGS=0V VDS=100V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate .