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Toshiba |
High Power Switching Applications |
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Toshiba |
Silicon N Channel IGBT GTR Module ent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in |
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Toshiba |
High Power Switching Applications |
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Toshiba |
Silicon N Channel IGBT GTR Module -emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance Symbol Test Condition IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff VF |
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Toshiba |
Silicon N - Channel IGBT V, VCE = 0 VCE = 1200V, VGE = 0 IC = 25mA, VCE = 5V VCE (sat) IC = 25A, VGE = 15V Cies tr ton tf toff Rth (j-c) VCE = 10V, VGE = 0, f=1MHz ― MG25Q1BS11 Min Typ. Max Unit ― ― ±500 nA ― ― 1.0 mA 3.0 ― 6.0 V ― 2.2 2.7 V ― 3000 ― pF ― 0.3 0.6 |
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Toshiba |
Silicon N Channel IGBT GTR Module ector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance Symbol Test Condition IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf to |
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Toshiba |
Silicon N Channel IGBT GTR Module Symbol Test Condition Min Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Rise time Switching time Turn-on time Turn-off delay time Fall t |
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Toshiba |
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
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Toshiba |
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
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Toshiba Semiconductor |
IGBT Module Silicon N Channel IGBT ime Rise time Switching time Turn-on time Turn-off delay time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance Turn-on Switching loss Turn-off Eoff Symbol IGES ICES VGE (off) VCE (sat) Cies td (on) tr ton td (off) tf t |
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Toshiba |
Silicon N Channel IGBT GTR Module ge Collector-emitter saturation voltage Input capacitance Switching time Reverse current Forward voltage Rise time Turn-on time Fall time Turn-off time Reverse recovery time Thermal resistance Transistor Diode Symbol Test Condition IGES ICES |
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Toshiba |
Silicon N Channel IGBT GTR Module iconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in |
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Toshiba |
Silicon N Channel IGBT GTR Module Collector-emitter voltage Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance IGES ICES |
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Toshiba |
Silicon N Channel IGBT GTR Module f voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off Time Reverse current Forward voltage Reverse recovery time Thermal resistance Transistor Diode Symbol IGES ICES VGE |
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Toshiba |
Silicon N - Channel IGBT st Condition VGE = ±20V, VCE = 0 VCE = 600V, VGE = 0 IC = 25mA, VCE = 5V IC = 25A, VGE = 15V VCE = 10V, VGE = 0, f = 1MHz ― MG25J1BS11 Min Typ. Max Unit ― ― ±500 nA ― ― 1.0 mA 3.0 ― 6.0 V ― 2.3 2.7 V ― 1400 ― pF ― 0.3 0.6 ― 0.4 0.8 µs ― 0.6 1 |
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Toshiba |
Silicon N Channel IGBT GTR Module • High input impedance • High speed: • Low saturation voltage: • Enhancement mode tf = 0.5µs (Max.) trr = 0.5µs (Max.) VCE (sat)= 4.0V (Max.) • The electrodes are isolated from case • Includes a complete half bridge card in one package Maximum |
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Toshiba |
Silicon N Channel IGBT GTR Module • 6 IGBTs are built into 1 package • High speed: • Low saturation voltage: • Enhancement mode tf = 0.5µs (Max.) trr = 0.5µs (Max.) VCE (sat) = 4.0V (Max.) • The electrodes are isolated from case Maximum Ratings (Ta = 25°C) CHARACTERISTICS Coll |
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Toshiba |
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
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Toshiba |
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
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Toshiba Semiconductor |
High Power Switching Applications Motor Control Applications nal Terminal Layout 7 5 8 2.54 25.4 ± 0.6 6 1. 5. G (L) G (H) 2. 6. FO (L) FO (H) 3. 7. E (L) E (H) 3 1 4 2.54 2 2.54 Weight: 375 g 2 2001-08-28 62 1.0 MG200Q2YS60A Maximum Ratings (Ta = 25°C) Stage Characteristics Collector-emitter v |
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