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MG25Q2YS40 |
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| Part Number | MG25Q2YS40 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input impedance • High speed: • Low satur... |
| Features |
• High input impedance • High speed: • Low saturation voltage: • Enhancement mode tf = 0.5µs (Max.) trr = 0.5µs (Max.) VCE (sat)= 4.0V (Max.) • The electrodes are isolated from case • Includes a complete half bridge card in one package Maximum Ratings (Ta = 25°C) CHARACTERISTICS SYMBOL RATING UNIT Collector-Emitter Voltage Gate-Emitter Voltage Collector Current DC 1ms Forward Current DC 1ms Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range Isolation Voltage Screw Torque (Terminal/Mounting) VCES VGES IC ICP IF IFM PC Tj Tstg VIsol — 1200... |
| Document |
 MG25Q2YS40 Data Sheet
PDF 597.15KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MG25Q1BS11 |
Toshiba |
Silicon N - Channel IGBT |
|
| 2 | MG25Q6ES42 |
Toshiba |
Silicon N Channel IGBT GTR Module |
|
| 3 | MG25Q6ES50 |
Toshiba |
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
|
| 4 | MG25Q6ES50A |
Toshiba |
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
|
| 5 | MG25Q6ES51 |
Toshiba |
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
|