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MG25Q6ES42 |
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| Part Number | MG25Q6ES42 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • 6 IGBTs are built into 1 package • High speed:... |
| Features |
• 6 IGBTs are built into 1 package • High speed: • Low saturation voltage: • Enhancement mode tf = 0.5µs (Max.) trr = 0.5µs (Max.) VCE (sat) = 4.0V (Max.) • The electrodes are isolated from case Maximum Ratings (Ta = 25°C) CHARACTERISTICS Collector-Emitter Voltage Gate-Emitter Voltage Collector Current DC 1ms Forward Current DC 1ms Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range Isolation Voltage Screw Torque SYMBOL RATING VCES VGES IC ICP IF IFM 1200 ± 20 25 50 25 50 PC 200 Tj Tstg VIsol — 150 -40 ~ 125 2500 (AC 1 Minute) 3 UNIT ... |
| Document |
 MG25Q6ES42 Data Sheet
PDF 595.24KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MG25Q6ES50 |
Toshiba |
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
|
| 2 | MG25Q6ES50A |
Toshiba |
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
|
| 3 | MG25Q6ES51 |
Toshiba |
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
|
| 4 | MG25Q6ES51A |
Toshiba |
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
|
| 5 | MG25Q1BS11 |
Toshiba |
Silicon N - Channel IGBT |
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