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MG200Q1US41 |
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| Part Number | MG200Q1US41 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US41 MG200Q1US41 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs (Max.) trr ... |
| Features |
ector-emitter saturation voltage
Input capacitance
Rise time
Switching time
Turn-on time Fall time
Turn-off time
Forward voltage
Reverse recovery time
Thermal resistance
Symbol
Test Condition
IGES ICES VGE (OFF) VCE (sat) Cies
tr ton tf toff VF
trr
Rth (j-c)
VGE = ±20V, VCE = 0 VCE = 1200V, VGE = 0 IC = 200mA ,VCE = 5V IC = 200A, VGE = 15V VCE = 10V, VGE = 0, f = 1MHz
IF = 200A, VGE = 0 IF = 200A, VGE = −10V di / dt = 300A / µs Transistor Diode
MG200Q1US41
Min Typ. Max Unit
― ― ±40 ― ― 4.0 3.0 ― 6.0 ― 3.0 4.0 ― 24000 ― ― 0.3 0.6 ― 0.4 0.8 ― 0.2 0.5 ― 0.8 1.5 ― 2.0 3.0
µA mA V V... |
| Document |
 MG200Q1US41 Data Sheet
PDF 195.68KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MG200Q1US51 |
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Silicon N Channel IGBT GTR Module |
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| 2 | MG200Q1UK1 |
ETC |
NPN |
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| 3 | MG200Q1UK1 |
ETC |
TRANSISTOR MODULES |
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| 4 | MG200Q1JS40 |
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Silicon N Channel IGBT GTR Module |
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| 5 | MG200Q1ZS11 |
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