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MG200Q2YS65H |
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| Part Number | MG200Q2YS65H |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | www.DataSheet4U.com MG200Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG200Q2YS65H High Power & High Speed Switching Applications Unit: mm · · · High input impedance Enhancement-mode The ele... |
| Features |
ime Rise time Switching time Turn-on time Turn-off delay time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance Turn-on Switching loss Turn-off Eoff Symbol IGES ICES VGE (off) VCE (sat) Cies td (on) tr ton td (off) tf toff VF trr Rth (j-c) Eon IF = 200 A, VGE = 0 IF = 200 A, VGE = -10 V, di/dt = 700 A/ms Transistor stage Diode stage Inductive load VCC = 600 V, IC = 200 A VGE = ±15 V, RG = 4.7 W Tc = 125°C Inductive load VCC = 600 V, IC = 200 A VGE = ±15 V, RG = 4.7 W Test Condition VGE = ±20 V, VCE = 0 VCE = 1200 V, VGE = 0 IC = 200 mA, VCE = 5 V IC = 200 A, VGE ... |
| Document |
 MG200Q2YS65H Data Sheet
PDF 188.86KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MG200Q2YS60A |
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| 2 | MG200Q2YS60A |
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| 4 | MG200Q2YS50 |
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