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MG200Q2YS50 |
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| Part Number | MG200Q2YS50 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | TOSHIBA GTR Module Silicon N Channel IGBT MG200Q2YS50 MG200Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs (Max.) @Ind... |
| Features |
Symbol
Test Condition
Min
Gate leakage current Collector cut-off current Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Turn-on delay time
Rise time
Switching time
Turn-on time Turn-off delay time
Fall time
Turn-off time
Forward voltage
Reverse recovery time
Thermal resistance
IGES ICES VGE (off)
VCE (sat)
Cies td(on)
tr ton td(off) tf toff VF
trr
Rth (j-c)
VGE = ±20V, VCE = 0
VCE = 1200V, VGE = 0
IC = 200mA, VCE = 5V
IC = 200A VGE = 15V
Tj = 25°C Tj = 125°C
VCE = 10V, VGE = 0, f = 1MHz
Inductive load VCC = 600V IC = 200A VGE = ±15V RG... |
| Document |
 MG200Q2YS50 Data Sheet
PDF 251.24KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MG200Q2YS40 |
Toshiba |
Silicon N Channel IGBT GTR Module |
|
| 2 | MG200Q2YS60A |
Toshiba Semiconductor |
High Power Switching Applications Motor Control Applications |
|
| 3 | MG200Q2YS60A |
Mitsubishi Electric |
High Power Switching Applications Motor Control Applications |
|
| 4 | MG200Q2YS65H |
Toshiba Semiconductor |
IGBT Module Silicon N Channel IGBT |
|
| 5 | MG200Q1JS40 |
Toshiba |
Silicon N Channel IGBT GTR Module |
|