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MG200Q2YS60A |
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| Part Number | MG200Q2YS60A |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | www.DataSheet4U.com MG200Q2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG200Q2YS60A (1200V/200A 2in1) High Power Switching Applications Motor Control Applications · · · · Integrates a complet... |
| Features |
nal Terminal Layout
7 5
8 2.54 25.4 ± 0.6 6
1. 5.
G (L) G (H)
2. 6.
FO (L) FO (H)
3. 7.
E (L) E (H)
3 1
4 2.54 2
2.54
Weight: 375 g
2
2001-08-28
62 1.0
MG200Q2YS60A
Maximum Ratings (Ta = 25°C)
Stage Characteristics Collector-emitter voltage Gate-emitter voltage DC Collector current Inverter Forward current 1 ms Collector power dissipation (Tc = 25°C) Control voltage (OT) Control Fault input voltage Fault input current Junction temperature Storage temperature range Module Operation temperature range Isolation voltage Screw torque 1 ms DC Symbol VCES VGES IC ICP IF IFM PC VD VFO ... |
| Document |
 MG200Q2YS60A Data Sheet
PDF 128.14KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MG200Q2YS60A |
Mitsubishi Electric |
High Power Switching Applications Motor Control Applications |
|
| 2 | MG200Q2YS65H |
Toshiba Semiconductor |
IGBT Module Silicon N Channel IGBT |
|
| 3 | MG200Q2YS40 |
Toshiba |
Silicon N Channel IGBT GTR Module |
|
| 4 | MG200Q2YS50 |
Toshiba |
Silicon N Channel IGBT GTR Module |
|
| 5 | MG200Q1JS40 |
Toshiba |
Silicon N Channel IGBT GTR Module |
|