MG25J1BS11 Toshiba Silicon N - Channel IGBT Datasheet, en stock, prix

logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description

MG25J1BS11

Toshiba
MG25J1BS11
MG25J1BS11 MG25J1BS11
zoom Click to view a larger image
Part Number MG25J1BS11
Manufacturer Toshiba (https://www.toshiba.com/)
Description TOSHIBA IGBT Module Silicon N - Channel IGBT MG25J1BS11 High Power Switching Applications Motor Control Applications MG25J1BS11 Unit: mm Enhancement-mode The electrodes are isolated from case. Equiv...
Features st Condition VGE = ±20V, VCE = 0 VCE = 600V, VGE = 0 IC = 25mA, VCE = 5V IC = 25A, VGE = 15V VCE = 10V, VGE = 0, f = 1MHz ― MG25J1BS11 Min Typ. Max Unit ― ― ±500 nA ― ― 1.0 mA 3.0 ― 6.0 V ― 2.3 2.7 V ― 1400 ― pF ― 0.3 0.6 ― 0.4 0.8 µs ― 0.6 1.0 ― 1.0 1.6 ― ― 1.00 °C / W 2 2003-04-11 MG25J1BS11 3 2003-04-11 MG25J1BS11 4 2003-04-11 MG25J1BS11 RESTRICTIONS ON PRODUCT USE 000707EAA
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivi...

Document Datasheet MG25J1BS11 Data Sheet
PDF 364.92KB
Distributor Stock Price Buy

Similar Datasheet

No. Partie # Fabricant Description Fiche Technique
1 MG25J6ES40
ETC
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS. Datasheet
2 MG251A
Micro
0.5 DUAL DIGIT NUMERIC DISPLAYS Datasheet
3 MG251C
Micro
0.5 DUAL DIGIT NUMERIC DISPLAYS Datasheet
4 MG25664-01
BONA
LCD Datasheet
5 MG25M2YK1
ETC
TRANSISTOR MODULES Datasheet
More datasheet from Toshiba



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact