MG25J1BS11 |
Part Number | MG25J1BS11 |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Description | TOSHIBA IGBT Module Silicon N - Channel IGBT MG25J1BS11 High Power Switching Applications Motor Control Applications MG25J1BS11 Unit: mm Enhancement-mode The electrodes are isolated from case. Equiv... |
Features |
st Condition VGE = ±20V, VCE = 0 VCE = 600V, VGE = 0 IC = 25mA, VCE = 5V IC = 25A, VGE = 15V VCE = 10V, VGE = 0, f = 1MHz
―
MG25J1BS11
Min Typ. Max Unit
― ― ±500 nA ― ― 1.0 mA 3.0 ― 6.0 V
― 2.3 2.7 V
― 1400 ―
pF
― 0.3 0.6
― 0.4 0.8 µs
― 0.6 1.0
― 1.0 1.6
― ― 1.00 °C / W
2 2003-04-11
MG25J1BS11
3 2003-04-11
MG25J1BS11
4 2003-04-11
MG25J1BS11
RESTRICTIONS ON PRODUCT USE
000707EAA
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivi... |
Document |
MG25J1BS11 Data Sheet
PDF 364.92KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MG25J6ES40 |
ETC |
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS. | |
2 | MG251A |
Micro |
0.5 DUAL DIGIT NUMERIC DISPLAYS | |
3 | MG251C |
Micro |
0.5 DUAL DIGIT NUMERIC DISPLAYS | |
4 | MG25664-01 |
BONA |
LCD | |
5 | MG25M2YK1 |
ETC |
TRANSISTOR MODULES |