MG200Q1ZS40 Toshiba Silicon N Channel IGBT GTR Module Datasheet, en stock, prix

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MG200Q1ZS40

Toshiba
MG200Q1ZS40
MG200Q1ZS40 MG200Q1ZS40
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Part Number MG200Q1ZS40
Manufacturer Toshiba (https://www.toshiba.com/)
Description TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1ZS40 MG200Q1ZS40 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs (max) trr =...
Features f voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off Time Reverse current Forward voltage Reverse recovery time Thermal resistance Transistor Diode Symbol IGES ICES VGE (off) VCE (sat) Cies tr ton tf toff IR VF trr Test Condition VGE = ±20V, VCE = 0 VCE = 1200V, VGE = 0 VCE = 5V, IC = 200mA IC = 200A, VGE = 15V VCE = 10V, VGE = 0, f = 1MHz VR = 1200V IF = 200A, VGE = 0 IF = 200A, VGE = −10V di / dt = 300A / µs Rth (j-c) MG200Q1ZS40 Min Typ. Max Unit ― ― ±20 ― ― 2.0 3.0 ― 6.0 ― 3.0 4.0 ― 24000 ― ― 0.3 0.6 ― 0....

Document Datasheet MG200Q1ZS40 Data Sheet
PDF 203.06KB
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