| No. | Partie # | Fabricant | Description | Fiche Technique |
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ON Semiconductor |
MTW20N50E perature • Isolated Mounting Hole Reduces Mounting Hardware MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Drain−Source Voltage VDSS 500 Drain−Gate Voltage (RGS = 1.0 MΩ) VDGR 500 Gate−Source Voltage − Continuous − N |
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ON Semiconductor |
NPN Transistors • Wettable Flank Package for Optimal Automated Optical Inspection (AOI) • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen |
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ON Semiconductor |
Power MOSFET perature • Isolated Mounting Hole Reduces Mounting Hardware MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Drain−Source Voltage VDSS 500 Drain−Gate Voltage (RGS = 1.0 MΩ) VDGR 500 Gate−Source Voltage − Continuous − N |
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ON Semiconductor |
Power MOSFET perature • Isolated Mounting Hole Reduces Mounting Hardware MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Drain−Source Voltage Drain−Gate Voltage (RGS = 1.0 MΩ) Gate−Source Voltage − Continuous Drain Current − Continuous |
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ON Semiconductor |
TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM erature • Isolated Mounting Hole Reduces Mounting Hardware MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain−Source Voltage Drain−Gate Voltage (RGS = 1.0 MΩ) Gate−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms) Drain Current − |
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ON Semiconductor |
Power MOSFET covery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature Isolated Mounting Hole Reduces Mounting Hardware MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –G |
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ON Semiconductor |
Power MOSFET • Isolated Mounting Hole Reduces Mounting Hardware MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage – Continuous – Non –Repetitive (tp ≤ 10 ms) Symbol VDSS Preferred |
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ON Semiconductor |
Power MOSFET 7 Amp erature • Isolated Mounting Hole Reduces Mounting Hardware MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage – Continuous – Non –Repetitive (tp ≤ 10 ms) Drain Current – |
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ON Semiconductor |
Power MOSFET AMPERES 100 VOLTS RDS(on) = 0.035 OHM e –Source Voltage – Continuous – Non –Repetitive (tp ≤ 10 ms) Drain Current – Continuous Drain Current – Continuous @ 100°C Drain Current – Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Sing |
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ON Semiconductor |
Power MOSFET perature • Isolated Mounting Hole Reduces Mounting Hardware MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Drain−Source Voltage Drain−Gate Voltage (RGS = 1.0 MΩ) Gate−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 m |
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ON Semiconductor |
Power MOSFET • Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Isolated Mounting Hole • This i |
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ON Semiconductor |
Power MOSFET MΩ) VDGR 150 Gate−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms) VGS VGSM ± 20 ± 40 Drain Current − Continuous Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 µs) ID 35 ID 26.9 IDM 105 Total Power Diss |
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