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MTW6N100E |
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| Part Number | MTW6N100E |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | MTW6N100E Preferred Device Power MOSFET 6 Amps, 1000 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degradi... |
| Features |
perature • Isolated Mounting Hole Reduces Mounting Hardware MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Drain−Source Voltage Drain−Gate Voltage (RGS = 1.0 MΩ) Gate−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms) Drain Current − Continuous Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 μs) Total Power Dissipation Derate above 25°C VDSS VDGR VGS VGSM ID ID IDM PD 1000 1000 ± 20 ± 40 6.0 4.2 18 180 1.43 Operating and Storage Temperature Range TJ, Tstg −55 to 150 Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 2... |
| Document |
 MTW6N100E Data Sheet
PDF 204.85KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MTW6N100E |
Motorola |
TMOS POWER FET |
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| 2 | MTW6N60E |
Motorola |
TMOS POWER FET |
|
| 3 | MTW10N100E |
Motorola |
TMOS POWER FET |
|
| 4 | MTW10N100E |
ON Semiconductor |
Power MOSFET |
|
| 5 | MTW10N40E |
Motorola |
TMOS E-FET POWER FIELD EFFECT TRANSISTOR |
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