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MTW10N100E |
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| Part Number | MTW10N100E |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | MTW10N100E co m Preferred Device Power MOSFET t e 10 Amps, e 1000 Volts N–Channel TO–247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability... |
| Features |
covery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature Isolated Mounting Hole Reduces Mounting Hardware
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage – Continuous – Non –Repetitive (tp ≤ 10 ms) Drain Current – Continuous Drain Current – Continuous @ 100°C Drain Current – Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain –to –Source Avalanche Energy – Starting TJ = 25°C (VDD ... |
| Document |
 MTW10N100E Data Sheet
PDF 122.12KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MTW10N100E |
Motorola |
TMOS POWER FET |
|
| 2 | MTW10N40E |
Motorola |
TMOS E-FET POWER FIELD EFFECT TRANSISTOR |
|
| 3 | MTW14N50E |
Motorola |
TMOS POWER FET |
|
| 4 | MTW14N50E |
ON Semiconductor |
Power MOSFET |
|
| 5 | MTW16N40E |
Motorola |
TMOS POWER FET |
|