MTW45N10E |
Part Number | MTW45N10E |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Description | www.DataSheet4U.com MTW45N10E Preferred Device Power MOSFET 45 Amps, 100 Volts N–Channel TO–247 This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes... |
Features |
e –Source Voltage – Continuous – Non –Repetitive (tp ≤ 10 ms) Drain Current – Continuous Drain Current – Continuous @ 100°C Drain Current – Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain –to –Source Avalanche Energy – Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, IL = 45 Apk, L = 0.8 mH, RG = 25 Ω) Thermal Resistance – Junction to Case Thermal Resistance – Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VDGR VGS VGSM ID ID IDM PD TJ, Tstg EAS Value 100 Un... |
Document |
MTW45N10E Data Sheet
PDF 255.22KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MTW45N10E |
Motorola |
TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHM | |
2 | MTW4N80E |
Motorola |
TMOS POWER FET | |
3 | MTW10N100E |
Motorola |
TMOS POWER FET | |
4 | MTW10N100E |
ON Semiconductor |
Power MOSFET | |
5 | MTW10N40E |
Motorola |
TMOS E-FET POWER FIELD EFFECT TRANSISTOR |