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MTW7N80E |
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| Part Number | MTW7N80E |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | MTW7N80E Preferred Device Power MOSFET 7 Amps, 800 Volts N–Channel TO–247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degradin... |
| Features |
erature • Isolated Mounting Hole Reduces Mounting Hardware MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage – Continuous – Non –Repetitive (tp ≤ 10 ms) Drain Current – Continuous Drain Current – Continuous @ 100°C Drain Current – Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain –to –Source Avalanche Energy – Starting TJ = 25°C (VDD =100 Vdc, VGS = 10 Vdc, IL = 21 Apk, L = 3.0 mH, RG = 25 Ω) Thermal Resistance – Junction to Case Thermal R... |
| Document |
 MTW7N80E Data Sheet
PDF 134.07KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MTW7N80E |
Motorola |
TMOS POWER FET 7.0 AMPERES |
|
| 2 | MTW10N100E |
Motorola |
TMOS POWER FET |
|
| 3 | MTW10N100E |
ON Semiconductor |
Power MOSFET |
|
| 4 | MTW10N40E |
Motorola |
TMOS E-FET POWER FIELD EFFECT TRANSISTOR |
|
| 5 | MTW14N50E |
Motorola |
TMOS POWER FET |
|