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MTW35N15E |
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| Part Number | MTW35N15E |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | MTW35N15E Preferred Device Power MOSFET 35 Amps, 150 Volts N−Channel TO−247 This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy effic... |
| Features |
MΩ)
VDGR
150
Gate−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms)
VGS VGSM
± 20 ± 40
Drain Current − Continuous Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 µs)
ID
35
ID
26.9
IDM
105
Total Power Dissipation Derate above 25°C
PD
180
1.45
Operating and Storage Temperature Range TJ, Tstg −55 to 150
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C (VDD = 80 Vdc, VGS = 10 Vdc, IL = 20 Apk, L = 3.0 mH, RG = 25 Ω)
EAS
600
Thermal Resistance − Junction to Case Thermal Resistance − Junction to Ambient
RθJC RθJA
0.70 62.5
Ma... |
| Document |
 MTW35N15E Data Sheet
PDF 164.32KB |
| Distributor | Stock | Price | Buy |
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