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MTW14N50E |
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| Part Number | MTW14N50E |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | MTW14N50E Preferred Device Power MOSFET 14 Amps, 500 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degradi... |
| Features |
perature • Isolated Mounting Hole Reduces Mounting Hardware MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Drain−Source Voltage Drain−Gate Voltage (RGS = 1.0 MΩ) Gate−Source Voltage − Continuous Drain Current − Continuous Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C VDSS VDGR VGS ID ID IDM PD 500 500 ± 20 14 9.0 60 180 1.44 Operating and Storage Temperature Range TJ, Tstg −55 to 150 Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10 Vpk, IL = 14 Apk,... |
| Document |
 MTW14N50E Data Sheet
PDF 187.67KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MTW14N50E |
Motorola |
TMOS POWER FET |
|
| 2 | MTW10N100E |
Motorola |
TMOS POWER FET |
|
| 3 | MTW10N100E |
ON Semiconductor |
Power MOSFET |
|
| 4 | MTW10N40E |
Motorola |
TMOS E-FET POWER FIELD EFFECT TRANSISTOR |
|
| 5 | MTW16N40E |
Motorola |
TMOS POWER FET |
|