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MTW32N20E |
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| Part Number | MTW32N20E |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | MTW32N20E Power MOSFET 32 Amps, 200 Volts N−Channel TO−247 This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also... |
| Features |
• Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Isolated Mounting Hole • This is a Pb−Free Device* MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−Source Voltage Drain−Gate Voltage (RGS = 1.0 MW) Gate−Source Voltage − Continuous Drain Current − Continuous Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 ms) Total Power Dissipation Derate above 25°C VDSS VDGR VGS ... |
| Document |
 MTW32N20E Data Sheet
PDF 127.52KB |
| Distributor | Stock | Price | Buy |
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