20N50E |
Part Number | 20N50E |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Description | MTW20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degradi... |
Features |
perature • Isolated Mounting Hole Reduces Mounting Hardware MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Drain−Source Voltage VDSS 500 Drain−Gate Voltage (RGS = 1.0 MΩ) VDGR 500 Gate−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms) VGS VGSM ± 20 ± 40 Drain Current − Continuous Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 µs) ID 20 ID 14.1 IDM 60 Total Power Dissipation Derate above 25°C PD 250 2.0 Operating and Storage Temperature Range TJ, Tstg −55 to 150 Single Pulse Drain−to−Source Avalanche Energy − Sta... |
Document |
20N50E Data Sheet
PDF 102.78KB |
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