| No. | Partie # | Fabricant | Description | Fiche Technique |
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ON Semiconductor |
MJD45H11 • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“−1” Suffix) • Electrically Similar to Popular D44H/D45H Series • Low Collector Emitter Saturation Voltage • Fast Switching Speeds |
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Inchange Semiconductor |
Silicon NPN Darlington Power Transistor .com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJD122 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(sus) Collector-Emitter Susta |
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Inchange Semiconductor |
Silicon NPN Power Transistor 0 UNIT ℃/W ℃/W MJD50 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter |
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ON Semiconductor |
Complementary Darlington Power Transistor • Lead Formed for Surface Mount Applications in Plastic Sleeves • Surface Mount Replacements for 2N6040−2N6045 Series, TIP120−TIP122 Series, and TIP125−TIP127 Series • Monolithic Construction With Built−in Base−Emitter Shunt Resistors • High DC Curre |
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Inchange Semiconductor |
Silicon PNP Darlington Power Transistor ICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage VCE(sat)-2 Collector-Emitter Saturation Voltage VBE(sat) Base-Emit |
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Inchange Semiconductor |
Silicon PNP Power Transistor or MJD5731 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V (BR)CEO Collector-Emitter Breakdown Voltage IC=-30mA, IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.2A VBE(on) Base-E |
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ON Semiconductor |
Complementary Darlington Power Transistor • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“−1” Suffix) • Electrically Similar to Popular TIP31 and TIP32 Series • NJV Prefix for Automotive and Other Applications Requiring |
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ON Semiconductor |
Complementary Darlington Power Transistor • Lead Formed for Surface Mount Applications in Plastic Sleeves • Surface Mount Replacements for 2N6040−2N6045 Series, TIP120−TIP122 Series, and TIP125−TIP127 Series • Monolithic Construction With Built−in Base−Emitter Shunt Resistors • High DC Curre |
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Inchange Semiconductor |
Silicon PNP Power Transistor Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MJD210 MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustai |
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ON Semiconductor |
High Voltage Power Transistors • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Electrically Similar to Popular TIP47, and TIP50 • Epoxy Meets UL 94 V−0 @ 0.125 in • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Cha |
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Inchange Semiconductor |
Silicon NPN Power Transistor mi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJD112 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1* Collector-Emitter S |
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Inchange Semiconductor |
Silicon PNP Power Transistor erwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1* Collector-Emitter Saturation Voltage IC= -2A; IB=- 8mA VCE(sat)-2* Collector-Emitter Saturation Voltage IC= -4A; IB=- 40mA VBE(sat)* Base-Emitter Saturation Voltage IC=- 4A; IB=- 40mA V |
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Inchange Semiconductor |
Silicon PNP Power Transistor 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA ;IB= 0 VCE(sat)-1 Colle |
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Inchange Semiconductor |
Silicon NPN Power Transistor isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor MJD243 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Volt |
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Inchange Semiconductor |
Silicon NPN Power Transistor ebsite：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor MJD148 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC |
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Inchange Semiconductor |
Silicon PNP Power Transistor tance,Junction to Ambient 71.4 ℃/W MJD45H11 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors MJD45H11 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIO |
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Inchange Semiconductor |
Silicon NPN Power Transistor T ℃/W ℃/W isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors INCHANGE Semiconductor MJD47 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) |
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Inchange Semiconductor |
Silicon PNP Darlington Power Transistor MJD128 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor MJD128 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SU |
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ON Semiconductor |
Complementary Darlington Power Transistor • Lead Formed for Surface Mount Applications in Plastic Sleeves • Surface Mount Replacements for 2N6040−2N6045 Series, TIP120−TIP122 Series, and TIP125−TIP127 Series • Monolithic Construction With Built−in Base−Emitter Shunt Resistors • High DC Curre |
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ON Semiconductor |
High Voltage Power Transistors • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Electrically Similar to Popular TIP47, and TIP50 • Epoxy Meets UL 94 V−0 @ 0.125 in • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Cha |
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