MJD2955 Inchange Semiconductor Silicon PNP Power Transistor Datasheet, en stock, prix

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MJD2955

Inchange Semiconductor
MJD2955
MJD2955 MJD2955
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Part Number MJD2955
Manufacturer Inchange Semiconductor
Description ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= -1.1 V(Max)@ IC = -4A ·Complement to Type MJD3055 ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations ...
Features 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A ;IB= -0.4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A ;IB= -3.3A VBE(on) Base-Emitter On Voltage IC= -4A ; VCE= -4V ICEO Collector Cutoff Current VCE= -30V; IB= 0 ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= ...

Document Datasheet MJD2955 Data Sheet
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