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MJD50 |
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| Part Number | MJD50 |
| Manufacturer | Inchange Semiconductor |
| Description | ·DC Current Gain -hFE = 30~150@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performanc... |
| Features |
0
UNIT ℃/W ℃/W
MJD50
isc website： www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A
VBE(on) Base-Emitter On Voltage
IC= 1A; VCE= 10V
ICEO
Collector Cutoff Current
VCE= 300V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
hFE-1
DC Current Gain
IC= 0.3A; VCE= 10V
hFE-2
D... |
| Document |
 MJD50 Data Sheet
PDF 186.24KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MJD50 |
Fairchild |
NPN Epitaxial Silicon Transistor |
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| 2 | MJD50 |
ST Microelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
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| 3 | MJD50 |
Motorola |
NPN SILICON POWER TRANSISTORS |
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| 4 | MJD50 |
ON Semiconductor |
High Voltage Power Transistors |
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| 5 | MJD50 |
Kexin |
NPN Epitaxial Silicon Transistor |
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