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MJD112 |
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| Part Number | MJD112 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High DC current gain ·Lead formed for surface mount applications(NO suffix) ·Straight lead(IPAK,“－I”suffix) ·Built-in a damper diode at E-C ·100% avalanche tested ·Minimum Lot-to-Lot variations for r... |
| Features |
mi.com
1 isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
MJD112
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat)-1* Collector-Emitter Saturation Voltage IC= 2A; IB= 8mA
VCE(sat)-2* Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA
VBE(sat)* Base-Emitter Saturation Voltage
IC= 4A; IB= 40mA
VBE(on)* Base-Emitter On Voltage
IC= 2A; VCE= 3V
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
IEBO
Emitter Cutoff Curr... |
| Document |
 MJD112 Data Sheet
PDF 257.64KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MJD112 |
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| 2 | MJD112 |
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| 3 | MJD112 |
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| 4 | MJD112 |
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| 5 | MJD112 |
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