MJD210 |
Part Number | MJD210 |
Manufacturer | Inchange Semiconductor |
Description | ·High DC Current Gain- : hFE = 70(Min) @ IC= -0.5A ·Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A ·Complement to the NPN MJD200 ·Minimum Lot-to-Lot variations for robust devic... |
Features |
Website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MJD210
MIN MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA; IB= 0
-25
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -0.5 A ;IB= -50mA
-0.3
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -2A ;IB= -0.2A
-0.75
V
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= -5A ;IB= -1A
-1.8
V
VBE(sat) Base-Emitter Saturation Voltage
IC= -5A ;IB= -1A
-2.5
V
VBE(on) B... |
Document |
MJD210 Data Sheet
PDF 206.59KB |
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