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MJD148 |
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| Part Number | MJD148 |
| Manufacturer | Inchange Semiconductor |
| Description | ·DC Current Gain- : hFE = 85(Min) @ IC= 0.5A ·Low Collector Saturation Voltage- : VCE(sat) = 0.5V(Max.)@ IC= 2A ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device pe... |
| Features |
ebsite：www.iscsemi.com
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isc Silicon NPN Power Transistor
MJD148
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A ;IB= 0.2A
VBE(on) Base-Emitter On Voltage
IC= 2A; VCE= 1V
ICBO
Collector Cutoff Current
VCB= 45V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 10mA ; VCE= 5V
hFE-2
DC Current Gain
IC= 0.5A ; VCE= 1V
hFE-3
DC Current Gain
IC= 2A ; VCE= ... |
| Document |
 MJD148 Data Sheet
PDF 205.53KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MJD148 |
CDIL |
NPN SILICON PLASTIC POWER TRANSISTORS |
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| 2 | MJD148 |
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| 3 | MJD112 |
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| 4 | MJD112 |
MCC |
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| 5 | MJD112 |
Inchange Semiconductor |
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