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MJD5731 |
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| Part Number | MJD5731 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -350V(Min) ·High Switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for li... |
| Features |
or
MJD5731
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V (BR)CEO Collector-Emitter Breakdown Voltage IC=-30mA, IB=0
VCE(sat)
Collector-Emitter Saturation Voltage IC= -1A; IB= -0.2A
VBE(on)
Base-Emitter On Voltage
IC= -1A ; VCE= -10V
MIN -350
TYP MAX UNIT
V
-1.0
V
-1.5 V
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
hFE
DC Current Gain
VCE= -250V; IE= 0
VCB= -350V; IE= 0
VEB= -5V; IC=0
IC= -0.3A; VCE= -10V
30
IC= -1A; VCE= -10V
10
-0.1 mA
-10
uA
-0.5 mA
175
fT
Current-Ga... |
| Document |
 MJD5731 Data Sheet
PDF 222.13KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
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