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MJD128 |
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| Part Number | MJD128 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High DC Current Gain- : hFE = 1000(Min)@ IC= -4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -120V(Min) ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device ... |
| Features |
MJD128
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Darlington Power Transistor
MJD128
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA, IB= 0
-120
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A ,IB= -16mA
-2.0
V
VCE(sat)-2 Collector-Emitter Saturation voltage IC= -8A ,IB= -80mA
-4.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC=-8A; IB= -80mA
-4.5
V
VBE(on)
Base-Emitter On Voltage
IC= -4A ; VCE= -4V
-2.8... |
| Document |
 MJD128 Data Sheet
PDF 206.41KB |
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